Part Number | FDC2612 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Samtec |
Description | MOSFET N-CH 200V 1.1A SSOT-6 |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 234pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.6W (Ta) |
Rds On (Max) @ Id, Vgs | 725 mOhm @ 1.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SuperSOT,6 |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
Hot Offer
FDC2612
SamtecInc
5762
3.1725
Multi-Source Technology (HK) Limited
FDC2612
SAMSUG
4342
3.83
HK Future Electronic Company Limited
FDC2612_F095
Samtec Inc
479
1.2
CIS Ltd (CHECK IC SOLUTION LIMITED)
FDC2612
SAMTEC?[Samtec, Inc]
6113
1.8575
Riking Technology (HK) Co., Limited
FDC2612
Samtec Inc.
8929
2.515
Yingxinyuan INT'L (Group) Limited